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About Us
Material Silicon
Method Czochralski-Growth
Dopant P-type by Boron
Orientation of growth (100) +/- 3dergree
Specific resistivity 3.0-6.0 (partially 5-15)
Oxygen as Oi = 15 us
Dimension 201.1+/-0.4 after rounding mm
Cleavage line (110) marked by red ink,
Roughness on rounding surface grind up by $140-#170
Effective length 100 to 400 mm
Etch pit density <= 3,000 1/cm2
Appearance No crack, inclusion, sticks, crystal
defect by naked eye
Perpendicularity on edge <=1.0 degree ...
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